Project "SiGeSn laser for silicon photonics"Copyright: © B. Marzban, from DOI: 10.1021/acsphotonics.2c01508
|Project Details||DFG 299480227|
|General Term||Light Sources|
The integration of semiconductor lasers on silicon substrates represents a promising approach for the development of efficient, compact, and cost-effective photonics- platforms. The monolithic integration of silicon electronics together with photonics can be realized with great potential through the novel group-IV material system SiGeSn.
With support from the Forschungszentrum Jülich for epitaxial growth, the University of Stuttgart for device fabrication, and the Leibniz Institute IHP for material and device characterization, the RWTH Aachen University presents this project of modeling an electrically pumped (Si)GeSn microring laser.
In the second research period, the focus was on improving the already optically pumped GeSn laser at low temperatures and realizing an electrically pumped laser at room temperature.
The ring-shaped structure allows for enhanced strain relaxation, leading to improved optical properties and better guidance of charge carriers into the optically active region. (Add picture from Strain Engineered Electrically Pumped SiGeSn Microring Lasers on Si | ACS Photonics for the design)
The (Si)GeSn laser diode features a microring structure and is based on a double heterostructure (DHS) layer stack. To achieve efficient electrical connection with low series resistance, highly doped contact layers are preferably grown epitaxially.
For more information about the structure and modeling results, please refer to the project details.