Si surface cleaning for semiconductor circuits


Si surface cleaning process Abstract:
A method is disclosed for the cleaning of a Si surface at low temperatures. Oxide on the Si surface is brought into contact with Ge, which then sublimates off the surface. The Ge contamination remaining after the oxide removal is cleared away by an exposure to an alkali halide. The disclosed cleaning method may by used in semiconductor circuit fabrication for preparing surfaces ahead of epitaxial growth.

G. Capellini, Gianlorenzo Masini, L. C. Gunn, J. Witzens, J. W. White, Si Surface Cleaning for Semiconductor Circuits, US patent filed Oct. 2007.