Edge Couplers with relaxed Alignment Tolerance for Pick-and-Place Hybrid Integration of III-V Lasers with SOI Waveguides

 

 Edge Coupler Abstract:

We report on two edge-coupling and power splitting devices for hybrid integration of III-V lasers with sub-micrometric silicon-on-insulator (SOI) waveguides. The proposed devices relax the horizontal alignment tolerances required to achieve high coupling efficiencies and are suitable for passively aligned assembly with pick-and-place tools. Light is coupled to two on-chip single mode SOI waveguides with almost identical power coupling efficiency, but with a varying relative phase accommodating the lateral misalignment between the laser diode and the coupling devices, and is suitable for the implementation of parallel optics transmitters. Experimental characterization with both a lensed fiber and a Fabry-Pérot semiconductor laser diode has been performed. Excess insertion losses (in addition to the 3 dB splitting) taken as the worst case over both waveguides of respectively 2 dB and 3.1 dB, as well as excellent 1 dB horizontal loss misalignment ranges of respectively 2.8 µm and 3.8 µm (worst case over both in-plane axes) have been measured for the two devices. Back-reflections to the laser are below -20 dB for both devices within the 1 dB misalignment range. Devices were fabricated with 193 nm DUV optical lithography and are compatible with mass-manufacturing with mainstream CMOS technology.

S. Romero-García, B, Marzban, F. Merget, B. Shen and J. Witzens, “Edge Couplers with relaxed Alignment Tolerance for Pick-and-Place Hybrid Integration of III-V Lasers with SOI Waveguides,” accepted for publication in IEEE J. Selected Topics in Quantum Electronics issue on Silicon Photonics.

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